FDB8860_08 Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench® MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
1.4
V_GS = V_DS
1.2
I_D = 250μA
1.0
0.8
0.6
0.4
0.2
-80 -40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE( ^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.10
I_D = 1mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE( ^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
C_iss
10000
10
V_DD = 15V
8
C_oss
6
C_rss
1000 ^{f = 1MHz}
VGS = 0V
500
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
4
2
I_D = 80A
I_D = 1A
0
0 20 40 60 80 100 120 140 160 180
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge vs Gate to Source Voltage
FDB8860 Rev A1
6
www.fairchildsemi.com