FDB8443_F085 Datasheet, PDF (6/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics
1.2
V_GS = V_DS
I_D = 250μA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.15
I_D = 1mA
1.10
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
C_iss
10000
C_oss
1000
C_rss
f = 1MHz
VGS = 0V
100
0.1
1
10
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
10
ID = 35A
8
V_DD = 15V
V_DD = 20V
6
V_DD = 25V
4
2
0
0 20 40 60 80 100 120 140 160
Q_g, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
©2011 Fairchild Semiconductor Corporation
6
FDB8443_F085 Rev.C1
www.fairchildsemi.com