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FAN73832 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – Half-Bridge Gate-Drive IC
Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, RDT=20KΩ,TA=25°C, unless otherwise specified. The VIN and IIN parameters are referenced
to GND. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO
and LO.
Symbol
Parameter
Condition
Min.
SUPPLY CURRENT SECTION
IQBS Quiescent VBS supply current
IQDD
ISD(5)
Quiescent VDD supply current
Shutdown supply current
IPBS Operating VBS supply current
IPDD Operating VDD supply current
ILK
Offset supply leakage current
POWER SUPPLY SECTION
VIN=0V or 5V
VIN=0V or 5V, RDT=20KΩ
DT/SD=GND
fIN=20kHz, rms value
fIN=20kHz, rms value
VB=VS=600V
VDDUV+ VDD and VBS supply under-voltage
VBSUV+ positive going threshold
VDDUV- VDD and VBS supply under-voltage
VBSUV- negative going threshold
VDDUVH VDD supply under-voltage lockout
VBSUVH hysteresis
DEAD-TIME CONTROL SECTION
10.7
10.0
RDTINT Internal dead-time setting resistance
VDT Normal voltage at DT
GATE DRIVER OUTPUT SECTION
RDT=20KΩ
VOH High-level output voltage, VBIAS-VO
IO=20mA
VOL Low-level output voltage, VO
IO+
Output high short-circuit pulse current VO=0V, VIN=5V with PW<10µs 250
IO-
Output low short-circuit pulsed current VO=15V, VIN=0V with PW<10µs 500
VS
Allowable negative VS pin voltage for
IN signal propagation to HO
LOGIC INPUT SECTION (INPUT and SHUTDOWN)
VIH Logic "1" input voltage
2.9
VIL
Logic "0" input voltage
IIN+ Logic "1" input bias current
VIN=5V
IIN-
Logic "0" input bias current
VIN=0V
SD+ Shutdown "1" input voltage
SD- Shutdown "0" input voltage
2.9
RPD Input pull-down resistance
Typ.
35
300
650
400
650
11.6
10.8
0.8
20
3.0
350
650
-9.8
50
100
Max.
90
450
900
700
850
10
12.5
11.6
1.0
0.6
-7.0
1.2
100
2.0
1.2
Unit
µA
V
V
V
KΩ
V
V
V
mA
mA
V
V
V
µA
µA
V
V
KΩ
Note:
5. This parameter guaranteed by design.
© 2006 Fairchild Semiconductor Corporation
FAN73832 Rev. 1.0.2
6
www.fairchildsemi.com