FAN6756MRMY Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications

N-CHANNEL PowerTrench^® MOSFET
Advantages
• Provides lower conduction
losses, max R_SS(ON) = 16.5mΩ
at V_GS = 4.5V, I_D = 8A
• 40% smaller than legacy
solutions
• MicroFET 2mm x 3mm²
• RoHS Compliant
• HBM ESD protection >2kV
Applications
• Ultraportable applications
For more information, please visit:
www.fairchildsemi.com/pf/FD/FDMB2307NZ.html
Improve Battery Life, Reduce Space
in Li-Ion Battery Pack
For mobile applications that use a one-cell Li-Ion battery pack, Fairchild’s
FDMB2307NZ dual N-channel PowerTrench^® MOSFET, addresses design
space and efficiency challenges. The device enables bidirectional current flow,
and by using advanced PowerTrench processes, the FDMB2307NZ provides
high power density and a maximum R_SS(ON) of 16.5mΩ at V_GS = 4.5V, I_D = 8A.
This results in lower conduction losses, lower voltage drop, less power
dissipation and increased overall design efficiency when compared to
competitive solutions.
Designers will also benefit from excellent thermal performance, resulting in
cooler system operation, further increasing efficiency. The device’s small pack-
age size (MicroFET 2mm x 3mm²) provides one of the smallest MLP solutions
available—40% smaller than existing legacy solutions—saving significant board
space in their design.
80
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
I_S1S2 = 8 A
40
T_{J = 150} o_C
20
T_{J = 25} o_C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS, GATE TO SOURCE VOLTAGE (V)
On Resistance vs. Gate to Source Voltage
Product
Number
I_D max
(A)
P_D max
(W)
R_SS(ON)
max
@ 4.5V
/mΩ
R_SS(ON)
max
@ 4.2V/
mΩ
R_SS(ON)
max
@ 3.1V/
mΩ
Q_g
typ
nc
FDMB2307NZ 9.7
2.2
16.5
18
21
18
ESD
HBM
(kV)
>2
Package
(mm)
2 x 3 x 0.8