SGP6N60UF Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

200
Common Emitter
V_CC = 300V, V_GE = ± 15V
100
R
G
=
80Ω
T_C = 25℃
T_C = 125℃
Eon
Eon
Eoff
10
Eoff
5
1
2
3
4
5
6
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
100
Ω
Tc = 25℃
12
9
300 V
6
V_CC = 100 V
200 V
3
0
0
3
6
9
12
15
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
50
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
1
50us
100us
1㎳
DC Operation
0.1 ^{Single Nonrepetitive}
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
50
10
1
0.1
1
Safe Operating Area
V_GE=20V, T_C=100^oC
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
1 0.2
0.1
0.05
0.1 ^0.02
0.01
single pulse
0.01
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGP6N60UF Rev. A1