SGP5N60RUFD Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

1000
Common Emitter
V =±
GE
15V,
R
G
=
40Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Eoff
100
Eon
3
4
5
6
7
8
9
10
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 60Ω
12
T = 25℃
C
V = 100V
9
CC
300V
200V
6
3
0
0
3
6
9
12
15
18
Gate Charge, Q_g [nC]
Fig 14. Gate Charge Characteristics
50
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
50us
100us
1㎳
1
DC Operation
0.1 ^{Single Nonrepetitive}
Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristic
1000
40
10
1
1
Safe Operating Area
V_GE = 20V, T_C = 100℃
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
10^-5
single pulse
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGP5N60RUFD Rev. A1