SGH5N120RUFD Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

1000
Common Emitter
V =±
GE
15V,
R
G
=
30Ω
T = 25℃
C
T = 125℃
C
Eoff
Eon
Eoff
Eon
100
2
4
6
8
10
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14 ^RL ^{= 120Ω}
T = 25℃
C
12
10
8
600V
400V
6
V = 200V
CC
4
2
0
0
10
20
30
Gate Charge, Q_g [nC]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
10
I MAX. (Continuous)
C
50µs
100µs
1ms
1
DC Operation
0.1 ^{Single Nonrepetitive}
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V_CE [V]
1000
Fig 15. SOA Characteristics
10
Safe Operating Area
V_GE = 20V, T_C = 100℃
1
1
10
100
1000
Collector - Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA
10
1 ^0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.01
single pulse
1E-3
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH5N120RUFD Rev. B2