NDP408A Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)
1.15
1.1
I _D = 250µA
1.05
1
0.95
0.9
-50 -25
0
25
50
75 100 125 150 175
T_J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
1000
500
C _iss
200
C _oss
100
50
C _rss
f = 1 MHz
V _GS = 0V
10
0.1 0.2
0.5
1
2
5
10 20
50
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics.
30
V_GS = 0V
10
5
TJ = 125°C
2
25°C
1
0.5
-55°C
0.1
0.01
0.4
0.6
0.8
1
1.2
1.4
V _SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
I_D = 12A
15
10
V _DS= 12V
64
24
5
0
0
5
10
15
20
25
Q_g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
V_GS
R_GEN
G
V_DD
R_L
D
V _OUT
DUT
S
t _d(on)
t _on
tr
90%
t d(off)
t_off
tf
90%
Output, Vout
Input, Vin
10%
10%
50%
10%
90% ^Inverted
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP408.SAM