NDP4050 Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)
1.15
1.1
I_D = 250µA
1.05
1
0.95
0.9
-50 -25
0
25
50
75 100 125 150 175
T_J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
20
V_GS = 0V
10
5
TJ = 125°C
2
1
0.5
25°C
-55°C
0.2
0.1
0.4
0.6
0.8
1
1.2
1.4
V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
700
500
300
200
100
50
30
1
C _iss
C _oss
f = 1 MHz
V_GS = 0V
C _rss
2
3
5
10
20 30
60
V _DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
20
I_D = 15A
15
10
V_DS = 12V
24V
48V
5
0
0
5
10
15
20
Q _g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
V_GS
R_GEN
G
V_DD
R_L
D
V _OUT
DUT
S
Figure 11. Switching Test Circuit.
t _d(on)
t _on
t_r
90%
t_d(off)
t_off
t_f
90%
V_{O U T}
V_IN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDP4050 Rev. B