HUF76121P3 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

HUF76121P3, HUF76121S3S
Typical Performance Curves (Continued)
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
60
-40^oC
25^oC
150^oC
40
20
0
0
V_DD = 15V
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
100
V_GS = 10V
V_GS = 5V
80
60
V_GS = 4.5V
V_GS = 4V
V_GS = 3.5V
40
20
0
0
V_GS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
40
I_D = 47A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
35
I_D = 28A
30
25
20
I_D = 15A
15
10
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. SOURCE TO DRAIN ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.2
V_GS = V_DS, I_D = 250µA
1.0
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V, I_D = 47A
1.4
1.2
1.0
0.8
-60
0
60
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
I_D = 250µA
1.1
0.8
1.0
0.6
-60
0
60
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
0.9
-60.0
0.0
60.0
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
HUF76121P3, HUF76121S3S Rev. C1