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FSBB30CH60CT Datasheet, PDF (5/15 Pages) Fairchild Semiconductor – Motion SPMR 3 Series
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Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Rating Unit
VPN
Supply Voltage
Applied between P - NU, NV, NW
450
V
VPN(Surge) Supply Voltage (Surge)
Applied between P - NU, NV, NW
500
V
VCES
Collector - Emitter Voltage
600
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ 150°C
30
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ  150°C, Under 1 ms Pulse
60
A
Width
PC
Collector Dissipation
TJ
Operating Junction Temperature
TC = 25°C per Chip
(2nd Note 1)
78
W
- 40 ~ 150
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150C (at TC  125C).
Control Part
Symbol
Parameter
Conditions
Rating Unit
VCC
Control Supply Voltage
VBS
High-Side Control Bias Voltage
VIN
Input Signal Voltage
VFO
Fault Output Supply Voltage
IFO
Fault Output Current
VSC
Current-Sensing Input Voltage
Applied between VCC(H), VCC(L) - COM
20
V
Applied between VB(U) - VS(U), VB(V) - VS(V),
20
V
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ VCC + 0.3
V
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
-0.3 ~ VCC + 0.3 V
Sink Current at VFO pin
5
mA
Applied between CSC - COM
-0.3 ~ VCC + 0.3 V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ
Operating Junction Temperature
Conditions
TC = 25°C, TJ 150°C
TC = 25°C, TJ 150°C
Width
Under 1 ms Pulse
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
-40CTJ  150C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
2nd Notes:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
1.60
2.40
Unit
°C / W
°C / W
©2012 Fairchild Semiconductor Corporation
5
FSBB30CH60CT Rev. C3
www.fairchildsemi.com
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