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FQPF7N80C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET
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Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Zθ
(t)
JC
=
0.75
℃ /W
M ax.
2. D uty Factor, D = t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P u lse D u ra tio n [se c]
Figure 11-1. Transient Thermal Response Curve for FQP7N80C
100 D = 0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
1 0 -2
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 2.25 ℃ /W M ax.
2 . D u ty F ac to r, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P u lse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve for FQPF7N80C
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
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