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| FQP8N90C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
100
D =0 .5
1 0 -1
0.2
0.1
0.05
1 0 -2
0.02
0.01
sin gle p ulse
â» Notes :
1. Z θ JC(t) = 0.73 â /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W a ve P u lse D u ratio n [se c]
Figure 11-1. Transient Thermal Response Curve for FQP8N90C
100 D = 0 .5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
â» N o tes :
1 . Z θ JC(t) = 2 .0 8 â /W M a x.
2 . D uty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W ave P ulse D u ra tio n [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF8N90C
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
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