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FQP7N65C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 650V N-Channel MOSFET
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Typical Characteristics (Continued)
100
D =0.5
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0 .01
1 0 -2
sin g le p u lse
※ N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t)
F
T
= 0.78 ℃ /W M
a
C
ct
=
o r,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W ave P ulse D u ra tio n [sec]
Figure 11. Transient Thermal Response Curve for FQP7N65C
100
D = 0 .5
0 .2
0.1
1 0 -1
0.0 5
0 .02
0.0 1
1 0 -2
sing le pu lse
※ Notes :
1.
2.
3.
ZDθu Jt
T JM
Cy (
-
t) = 2.4
F a c to r,
TC = PD
℃ /W
MD*=Zt 1θ/
Max
t2
JC
(
t
)
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W ave P ulse D u ra tio n [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
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