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FQP3N80C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET
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Typical Characteristics (Continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
1 0 -2
sing le p ulse
※ Notes :
1. Z θ JC(t) = 1.17 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Zθ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11-1. Transient Thermal Response Curve for FQP3N80C
D = 0.5
100
0.2
0.1
1 0 -1
0.05
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 3.2 ℃ /W M ax.
2. D uty F actor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P u lse D u ratio n [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF3N80C
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
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