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FQP10N60C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N o te s :
1 . Z θ JC(t) = 0.8 ℃ /W M a x.
2 . D uty F a ctor, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P u lse D u ratio n [sec]
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
D = 0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
※ N otes :
1. Zθ
(t)
JC
=
2.5
℃ /W
M ax.
2. D uty Factor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
sin g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D uratio n [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003