 English |
|
|
|
|
|
|
|
| FPDB40PH60B Datasheet, PDF (5/12 Pages) Fairchild Semiconductor – Smart Power Module for Front-End Rectifier | |||
| |||
| ◁ |
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Item
IGBT saturation voltage
High-side diode voltage
Low-side diode voltage
Switching Times
Current sensing resistor
Collector - emitter
Leakage Current
Symbol
VCE(sat)
VFH
VFL
tON
tC(ON)
tOFF
tC(OFF)
trr
Irr
RSENSE
ICES
Condition
VCC =15V, VIN = 5V; IC =40A
IF = 40A
IF = 40A
VPN = 400V, VCC = 15V, IC =40A
VIN = 0V â 5V, Inductive Load
(Note 3)
VCE = VCES
Min.
-
-
-
-
-
-
-
-
-
1.8
-
Typ.
1.8
2.2
1.15
500
180
500
90
43
6
2.0
-
Max. Unit
2.3 V
2.7 V
1.55 V
-
ns
-
ns
-
ns
-
ns
-
ns
-
A
2.2 mΩ
250 μA
Note
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4
Control Part
Item
Symbol
Condition
Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM
rent
Fault Output Voltage
Over Current Trip Level
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
VFOH
VFOL
VSC(ref)
UVCCD
UVCCR
tFOD
VIN(ON)
VIN(OFF)
RTH
VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up
VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up
VCC = 15V
Detection Level
Reset Level
CFOD = 33nF (Note 4)
Applied between IN - COM
@ TC = 25°C (Note Fig. 9)
@ TC = 80°C (Note Fig. 9)
Min.
-
Typ. Max. Unit
-
26 mA
4.5
-
-
V
-
-
0.8 V
0.45 0.5 0.55 V
10.7 11.9 13.0 V
11.2 12.4 13.2 V
1.4 1.8 2.0 ms
3.0
-
-
V
-
-
0.8 V
-
50
-
kΩ
-
5.76
-
kΩ
Note
4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating conditions
Item
Input Supply Voltage
Output Voltage
Control Supply Voltage
Control Supply Variation
PWM Input Signal
Symbol
Condition
VI
VPN
VCC
dVCC/dt
fPWM
Applied between R - S
Applied between P - N
Applied between VCC - COM
Applied between IN - COM
TC ⤠100°C, TJ ⤠125°C, Per IGBT
Min.
180
-
13.5
-1
-
Typ.
-
280
15
-
20
Max.
264
400
16.5
1
-
Unit
Vrms
V
V
V/μs
kHz
©2009 Fairchild Semiconductor Corporation
February, 2009
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese