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FMG1G100US60H Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Molding Type Module | |||
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30000
25000
20000
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25â
15000
10000
Coes
5000
Cres
0
0.5
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
3000
Common Emitter
V = 300V, V = ± 15V
CC
GE
IC = 100A
TC = 25â
Toff
1000 TC = 125â
100
50
6
10
Gate Resistance, RG [⦠]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Tf
Tf
100
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 100A
T = 250C
C
T = 1250C
C
100
Ton
Tr
10
1
10
Gate Resistance, RG [â¦]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 100A
T = 250C
C
T = 1250C
C
Eon
Eoff
1000
1
10
Gate
Resistance,
R
G
[â¦]
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V = 300V, V = +/- 15V
CC
GE
RG = 2.4â¦
TC = 250C
T = 1250C
C
100
Ton
Tr
10
20
40
60
80
100
120
140
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 100A
C
TC = 250C
TC = 1250C
100
Toff
Tf
Tf
1
10
Gate
Resistance,
R
g
[â¦]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G100US60H Rev. A
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