FMC7G50US60 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Compact & Complex Module

7000
6000
5000
4000
3000
2000
1000
0
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 50A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Toff
Tf
Tf
100
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
5.9Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Ton
Tr
100
10
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 50A
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
10
100
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 50A
C
T = 25℃ ━━
C
Eon
T = 125℃ ------
C
Eoff
Eoff
1000
10
100
Gate Resistance, R_G [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Toff
Tf
Toff
100
Tf
Common Emitter
V_GE = ± 15V, R_G = 5.9Ω
T_C = 25℃ ━━
T_C = 125℃ ------
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC7G50US60 Rev. A3