FM2G75US60 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Molding Type Module

16000
14000
12000
10000
8000
6000
4000
2000
0
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
1
10
Collector - Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 75A
C
T = 25℃
C
T = 125℃
C
Toff
100 ^Tf
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
300
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
3.3Ω
T = 25℃
C
100 ^{TC = 125℃}
Ton
Tr
10
20
30
40
50
60
Collector Current, I [A]
C
70 75
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 75A
C
T = 25℃
Ton
C
T = 125℃
C
100
Tr
10
1
10
100
Gate
Resistance,
R
G
[Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
20000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 75A
10000 ^TC ^{= 25℃}
T = 125℃
C
Eon
Eoff
1000
1
10
100
Gate Resistance, Rg [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
3.3Ω
T = 25℃
C
T = 125℃
C
Toff
100
Tf
20
30
40
50
60
70 75
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FM2G75US60 Rev. A