FGH40N120ANTU Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – High speed switching

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE
G
10
T = 25°C
C
Eon
T = 125°C
C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, I [A]
C
Figure 15. SOA Characteristics
500
I_C MAX (Pulse)
100
10 _{IC MAX (Continuous)}
1
10µs
100µs
1ms
10 ms
DC Operation
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15Ω
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
100
10
0.1
0.01
1
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
10
100
1000 2000
Collector-Emitter Voltage, V_CE [V]
Safe Operating Area
V = 15V, T = 125^oC
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01 _0.02
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
FGH40N120AN Rev. A2
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