FGA60N60UFD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
12
8
60A
120A
4
I_C = 30A
0
0
3
6
9
12 15 18
Gate-Emitter Voltage, V_GE [V]
8
120A
4
60A
I_C = 30A
0
0
3
6
9
12 15 18
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
6000
4000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_ies
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 100V
9
300V
200V
C_oes
6
2000
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
3
0
0
50
100
150
200
Gate Charge, Q_g [nC]
Figure 11. SOA Characteristics
500
100
10
10µs
100µs
1ms
Figure 12. Turn off Switching SOA Characteristics
300
100
10 ms
1
DC
Single Nonrepetitive
0.1 ^{Pulse TC = 25oC}
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
FGA60N60UFD Rev. A
5
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