FDZ203N Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench BGA MOSFET

Typical Characteristics
5
I_D = 9A
4
V_DS = 5V
10V
15V
3
2
1
0
0
2
4
6
8
10
12
14
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1ms
10ms
100ms
1
1s
10s
DC
V_GS = 4.5V
0.1
SINGLE PULSE
R_θJA = 155^oC/W
T_A = 25^oC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1800
1500
f = 1MHz
V_GS = 0 V
1200
900
C_ISS
600
C_OSS
300
C_RSS
0
0
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 155°C/W
40
T_A = 25°C
30
20
10
0
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
t₁, TIME (sec)
R_θJA(t) = r(t) + R_θJA
R_θJA = 155 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ203N Rev.E6(W)