FDS8874_07 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
1.10
I_D = 250µA
1.05
1.00
5000
1000
C_RSS = C_GD
C_ISS = C_GS + C_GD
C_OSS ≅ C_DS + C_GD
0.95
0.90
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V_DD = 15V
8
6
4
2
WAVEFORMS IN
DESCENDING ORDER:
I_D = 16A
I_D = 1A
0
0
10
20
30
40
50
60
Q_g, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant
Gate Currents
V_GS = 0V, f = 1MHz
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
200
100
100us
10
1ms
1 ^{THIS AREA IS}
LIMITED BY r_DS(on)
0.1
0.01
0.01
SINGLE PULSE
T_J = MAX RATED
R_θJA = 125^oC/W
T_A = 25^oC
0.1
1
10
V_DS, DRAIN to SOURCE VOLTAGE (V)
10ms
100ms
1s
10s
DC
100
Figure 14. Forward Bias Safe Operating Area
©2007 Fairchild Semiconductor Corporation
5
FDS8874 Rev. B
www.fairchildsemi.com