FDPC8012S Datasheet, PDF (5/15 Pages) Fairchild Semiconductor – PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET

Typical Characteristics (Q1 N-Channel) T_J = 25°C unless otherwise noted
10
I_D = 13 A
8
6
4
V_DD = 10 V
V_DD = 13 V
V_DD = 15 V
2
0
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5000
1000
C_iss
C_oss
100
C_rss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
10
T_J = 100 ^oC
T_J = 125 ^oC
T_J = 25 ^oC
1
0.001 0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
60
R_θJC = 5.0 ^oC/W
48
V_GS = 10 V
36
V_GS = 4.5 V
24
Limited by Package
12
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
1000
100 μs
10
100
1 _{THIS AREA IS}
LIMITED BY r_DS(on)
SINGLE PULSE
0.1 T_J = MAX RATED
R_θJA = 151 ^oC/W
T_A = 25 ^oC
0.01
0.01
0.1
DERIVED FROM
TEST DATA
1
10
V_DS, DRAIN to SOURCE VOLTAGE (V)
1 ms
10 ms
100 ms
1s
10 s
DC
100
Figure 11. Forward Bias Safe
Operating Area
10
1 SINGLE PULSE
R_θJA = 151 ^oC/W
T_A = 25 ^oC
0.1
10^-4 10^-3 10^-2 10^-1
10⁰
10¹
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
5
FDPC8012S Rev.C1
www.fairchildsemi.com