FDP8874_08 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics T_C = 25°C unless otherwise noted
1.2
1.10
V_GS = V_DS, I_D = 250µA
I_D = 250µA
1.0
1.05
0.8
1.00
0.6
0.95
0.4
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
1000
C_RSS = C_GD
C_ISS = C_GS + C_GD
C_OSS ≅ C_DS + C_GD
V_GS = 0V, f = 1MHz
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
10
V_DD = 15V
8
6
4
WAVEFORMS IN
2
DESCENDING ORDER:
I_D = 40A
I_D = 1A
0
0
10
20
30
40
50
60
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDP8874 Rev. A3