FDN5632N_F085 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench® MOSFET 60V, 1.6A, 98mΩ

Typical Characteristics
30
10
100us
1
1ms
10ms
0.1
100ms
1s
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25^oC
0.001
0.01
0.1
1
10
DC
100 300
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
12
V_GS = 10V
V_GS = 6V
9
V_GS = 5V
V_GS = 4.5V
6
V_GS = 4V
V_GS = 3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
V_GS = 3V
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
2.0
PULSE DURATION = 80µs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
I_D = 1.7A
V_GS = 10V
-40
0
40
80 120 160
T_J, JUNCTION TEMPERATURE(^oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
9 VDD = 5V
6
T_J = 25^oC
T_J = -55^oC
3
T_J = 150^oC
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
200
I_D = 1.7A PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150
100
T_J = 150^oC
50
T_J = 25^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.4
V_GS = V_DS
1.2
I_D = 250µA
1.0
0.8
0.6
0.4
-80 -40
0
40
80 120 160
T_J, JUNCTION TEMPERATURE(^oC)
Figure 10. Normalized Gate Threshold
Voltage vs Junction Temperature
FDN5632N_F085 Rev. A (W)
5
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