FDMS7650DC Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 100 A, 0.99 mΩ

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 36 A
8
6
4
2
V_DD = 10 V
V_DD = 15 V
V_DD = 20 V
0
0
30
60
90
120
150
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
50000
10000
C_iss
C_oss
1000
f = 1 MHz
C_rss
VGS = 0 V
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
40
T_J = 25 ^oC
10
T_J = 100 ^oC
T_J = 125 ^oC
1
0.01
0.1
1
10 100 1000 10000
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
300
R_θJC = 1.0 ^oC/W
250
V_GS = 10 V
200
V_GS = 4.5 V
150
100
Limited by Package
50
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
100
10
THIS AREA IS
1 _{LIMITED BY rDS(on)}
SINGLE PULSE
0.1 ^{TJ = MAX RATED}
R_θJA = 81 ^oC/W
T_A = 25 ^oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10
100200
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
SINGLE PULSE
R_θJA = 81 ^oC/W
T_A = 25 ^oC
10
1
10^-3
10^-2
10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
5
FDMS7650DC Rev.C3
www.fairchildsemi.com