FDMS5360L_F085 Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

Typical Characteristics
50
ID =60A ^{PULSE DURATION = 80μs}
DUTY CYCLE = 0.5% MAX
40
30
20
T_J = 175^oC
10
T_J = 25^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
2.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
I_D = 60A
V_GS = 10V
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.5
V_GS = V_DS
I_D = 250μA
1.2
0.9
0.6
0.3
0.0
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.2
I_D = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
100
C_iss
C_oss
C_rss
10
f = 1MHz
VGS = 0V
1
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 60A
V_DD = 30V
8
V_DD = 24V
V_DD = 36V
6
4
2
0
0 10 20 30 40 50 60 70
Q_g, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDMS5360L_F085 Rev. C1
5
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