FDFS2P106A Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – Integrated 60V P-Channel PowerTrench팜 MOSFET and Schottky Diode

Typical Characteristics
10
I_D = -3A
8
V_DS = -20V
-30V
-40V
6
4
2
0
0
3
6
9
12
15
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
T_J = 125^oC
1
0.1
0.01
T_J = 25^oC
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
1000
800
600
400
200
0
0
C_ISS
f = 1MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.00E-07
1.00E-08
0
T_J = 125^oC
T_J = 25^oC
10
20
30
40
50
60
V_R, REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R_θJA(t) = r(t) + R_θJA
R_θJA = 135 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDFS2P106A Rev B(W)