FDFMA2P853_08 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

Typical Characteristics
5
I_D = -3.0A
4
3
2
V_DS = -5V
-15V
-10V
1
0
0
1
2
3
4
5
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
700
600
500
400
300
200
100
C_rss
0
0
C_oss
C_iss
f = 1MHz
V_GS = 0 V
4
8
12
16
20
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
10
1
T_J = 125^oC
0.1
0.01
T_J = 25^oC
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
0.01
0.001
0.0001
T_J = 125^oC
T_J = 85^oC
0.00001
0.000001
0
T_J = 25^oC
5
10
15
20
V_R, REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
FDFMA2P853 Rev. D2 (W)