FDD8896 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_C = 25°C unless otherwise noted
1.2
1.2
V_GS = V _DS , I_D = 250µA
I_D = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE ( ^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120 160 200
T_J , JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
C_ISS = C_GS + C_GD
10
V_DD = 15V
8
1000
C_RSS = C_GD
C_OSS ≅ C_DS + C_GD
V_GS = 0V, f = 1MHz
100
0.1
1
10
30
V_{D S}, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
2
DESCENDING ORDER:
I_D = 35A
I_D = 5A
0
0
10
20
30
40
50
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C