FDD6296 Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics
10
ID = 15A
8
VDS = 10V
6
15V
20V
4
2
0
0
5
10
15
20
25
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
RDS(ON) LIMIT
100
10
1
VGS = 10V
SINGLE PULSE
0.1 R_θJA = 96^oC/W
TA = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
1800
f = 1MHz
VGS = 0 V
1200
Ciss
600
Coss
Crss
0
0
5
10
15
20
25
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
SINGLE PULSE
80
R_θJA = 96°C/W
TA = 25°C
60
40
20
0
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.0
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA = 96 °C/W
P(pk)
t₁
t2
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. C(W)