FDB8442_F085 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1 _{OPERATION IN THIS}
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
1ms
10ms
DC
V_DS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
o
STARTING TJ = 25 C
10
o
STARTING T_J = 150 C
1
0.01
0.1
1
10 100 1000 5000
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 ^{VDD = 5V}
T_J = 175^oC
80
T_J = 25^oC
40
T_J = -55^oC
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
160
V_GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120
V_GS = 5V
V_GS = 4.5V
80
40
V_GS = 4V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
30
T_J = 175^oC
20
T_J = 25^oC
10
0
4
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80µs
1.6 ^{DUTY CYCLE = 0.5% MAX}
1.4
1.2
1.0
0.8
0.6
-80
I_D = 80A
V_GS = 10V
-40 0 40 80 120 160 200
T_J, JUNCTION TEMPERATURE(^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8442_F085 Rev. A1
5
www.fairchildsemi.com