SSF7N60A Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-CHANNEL POWER MOSFET

SSF7N60A
N-CHANNEL POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. V_GS = 0 V
2. I_D = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
T_J , Junction Temperature [^oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. V_GS = 10 V
2. I_D = 3.5 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
T_J , Junction Temperature [^oC]
10²
10¹
10⁰
10^-1
10^-2₁₀₀
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R _DS(on)
100 µs
1 ms
10 ms
DC
10 µs
@ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
6
4
2
0
25
50
75
100
125
150
T_c , Case Temperature [^oC]
Fig 11. Thermal Response
10⁰
D=0.5
0.2
0.1
10^{- 1} _0.05
0.02
0.01
10^{- 2}
10^{- 5}
single pulse
@ Notes :
1. Z_{θ J C} (t)=1.45 ^o C/W Max.
2. Duty Factor, D=t₁/t₂
3. T_{J M}-T_C =P_{D M}*Z_{θ J C}(t)
P
DM
t₁
t
2
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
10⁰
10¹
t₁ , Square Wave Pulse Duration [sec]
4