SI6410DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = 7.8A
8
6
V_DS = 10V
15V
20V
4
2
0
0
5
10
15
20
25
30
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
100us
10
1
V_GS = 10V
0.1
SINGLE PULSE
R_θJA = 114^oC/W
T_A = 25^oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
1200
800
400
0
0
C_ISS
f = 1MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
25
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
R_θJA = 114°C/W
T_A = 25°C
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA =114 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6410DQ Rev B(W)