SGU2N60UFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

160
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
120
Cies
80
Coes
40
Cres
0
1
10
30
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
600
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 1.2A
T_C = 25℃
T_C = 125℃
Toff
Tf
Toff
100
Tf
50
10
100
500
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
100
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
200Ω
T_C = 25℃
T_C = 125℃
Ton
Tr
10
0.5
1.0
1.5
2.0
2.5
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
100
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 1.2A
T_C = 25℃
T_C = 125℃
Ton
Tr
10
10
100
500
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
100
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 1.2A
T_C = 25℃
T = 125℃
C
Eon
Eoff
Eoff
10
5
10
100
500
Gate Resistance, R_G [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 200Ω
T_C = 25℃
T_C = 125℃
Toff
Toff
Tf
100
Tf
0.5
1.0
1.5
2.0
2.5
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGU2N60UFD Rev. A1