SFRU9130 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

SFR/U9130
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. V_GS = 0 V
2. I_D = -250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
T_J , Junction Temperature [^oC]
Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. V_GS = -10 V
2. I_D = -5.3 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
T_J , Junction Temperature [^oC]
10²
10¹
10⁰
10^-1
10⁰
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R _DS(on)
@ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
0.1 ms
1 ms
10 ms
DC
10¹
10²
-V_DS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
T_c , Case Temperature [^oC]
Fig 11. Thermal Response
D=0.5
10⁰
0.2
0.1
10^{- 1}
0.05
0.02
0.01
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=2.4
o _C/W
Max.
2. Duty Factor, D=t₁ /t₂
3.
T_J
M
-T_C
=P_D
M
*Z
θ
J
C
(t)
P_.DM
t
1.
t_2.
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
10⁰
10¹
t₁ , Square Wave Pulse Duration [sec]