RFD3055LE Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves Unless Otherwise Specified (Continued)
100
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
10
STARTING T_J = 150^oC
STARTING T_J = 25^oC
1
0.001
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
15
V_GS = 10V
12 ^{VGS = 5V}
V_GS = 4V
9
V_GS = 3.5V
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
T_C = 25^oC
0
V_GS = 3V
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12 ^{VDD = 15V}
9
6
T_J = 25^oC
3
T_J = 175^oC
0
T_J = -55^oC
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
150
I_D = 3A
120
I_D = 11A
I_D = 5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
90
60
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
150
V_GS = 4.5V, V_DD = 30V, I_D = 8A
t_r
100
t_f
50
t_d(OFF)
t_d(ON)
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
V_GS = 10V, I_D = 11A
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B