NDH8502P Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics
-10
VGS = -10V
-8
-6.0 _-5.0
-4.5
-6
-4
-4.0
-3.5
-2
-3.0
0
0
-1
-2
-3
-4
-5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
I_D = -2.2A
1.4
V _GS = -10V
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
-10
VDS = -10V
-8
T = -55°C
J
25°C
125°C
-6
-4
-2
0
-1
-2
-3
-4
-5
-6
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
3
2.5 VGS = -3.5V
-4.0
2
1.5
-4.5
-5.0
-5.5
-6.0
-10
1
0.5
0
-2
-4
-6
-8
-10
I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
VGS = -10V
1.5
1.2
0.9
0.6
TJ = 125°C
25°C
-55°C
0.3
0
-2
-4
-6
-8
-10
I _D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
V_DS = V _GS
1.1
I _D = -250µA
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T_J , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDH8502P Rev.C