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IRFS350A Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET
◁
IRFS350A
1&+$11(/
32:(5 026)(7
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. VGS = 10 V
2. ID = 8.5 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
102
101
100
10-1100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
10 µs
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
Tc , Case Temperature [oC]
Fig 11. Thermal Response
100
D=0.5
0.2
0.1
10- 1
0.05
0.02
0.01
10- 2
10- 5
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=1.35
o C/W
Max.
2. Duty Factor, D=t1 /t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
P
DM
t1
t2
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
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