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IRF610A Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET
◁
IRF610A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
102
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
DC
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. VGS = 10 V
2. ID = 1.65 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 10. Max. Drain Current vs. Case Temperature
4
3
2
10-1
10-2
100
@ Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101
102
VDS , Drain-Source Voltage [V]
1
0
25
50
75
100
125
150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
D=0.5
100
0.2
0.1
0.05
10- 1 0.02
0.01
10- 2
10- 5
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=3.28
o C/W
Max.
2. Duty Factor, D=t1 /t2
3. T -T =P *Z (t)
JM C DM θJC
PDM
t1
t2
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
 ▷