HUF76407DK8 Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

HUF76407DK8
Typical Performance Curves (Continued)
500
R_θJA = 228^oC/W
100
SINGLE PULSE
T_J
T_A
=
=
MAX
25^oC
RATED
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY r_DS(ON)
100µs
1ms
10ms
0.1
1
10
100 200
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
10
STARTING T_J = 25^oC
STARTING T_J = 150^oC
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
15
T_J = -55^oC
T_J = 25^oC
T_J = 150^oC
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
20
V_GS = 10V
V_GS = 5V
15
10
V_GS = 4.5V
V_GS = 4V
V_GS = 3.5V
PULSE DURATION = 80µs
5
DUTY CYCLE = 0.5% MAX
T_A = 25^oC
V_GS = 3V
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
150
I_D = 3.8A
120
I_D = 1A
90
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
V_GS = 10V, I_D = 3.8A
1.0
60
2
3
4
5
6
7
8
9 10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
©2001 Fairchild Semiconductor Corporation
0.5
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
HUF76407DK8 Rev. B