HUF75617D3ST Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs

HUF75617D3
Typical Performance Curves (Continued)
200
SINGLE PULSE
100
T_J = MAX RATED
T_C = 25^oC
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
1ms
10ms
0.1
1
10
100 200
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
10
STARTING T_J = 25^oC
STARTING T_J = 150^oC
1
0.001
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 ^VDD ^{= 15V}
20
15
10
T_J = 175^oC
T_J = -55^oC
5
T_J = 25^oC
0
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
30
V_GS = 10V
25
V_GS = 6V
20
15
V_GS = 5V
10
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
-80
V_GS = 10V, I_D = 16A
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
V_GS = V_DS, I_D = 250µA
1.0
0.8
0.6
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75617D3 Rev. B