HUF75542P3 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

HUF75542P3, HUF75542S3S
Typical Performance Curves (Continued)
500
SINGLE PULSE
T_J
T_C
=
=
MAX RATED
25^oC
100
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
1
1
10
10ms
100 200
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
1000
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
0.001
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 ^VDD ^{= 15V}
90
60
30
0
2
T_J = 175^oC
T_J = 25^oC
T_J = -55^oC
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
150
V_GS = 20V
V_GS = 10V
120
V_GS = 7V
90
60
V_GS = 6V
V_GS = 5V
30
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
V_GS = 10V, I_D = 75A
1.0
0.5
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
V_GS = V_DS, I_D = 250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75542P3, HUF75542S3S Rev. B