FQU5N60CTU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V = 0 V
GS
2. I_D = 250 μ A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R _DS(on)
10¹
10 µs
100 µs
1 ms
10⁰
10 ms
100 ms
DC
10^-1
10^-2
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. I_D = 1.4 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D =0 .5
10⁰
0 .2
0 .1
0 .0 5
1 0 ^-1
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1 . Z _{θ JC}(t) = 2 .5 6 ℃ /W M a x.
2 . D u ty Fa cto r, D = t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q ua re W ave P u lse D uratio n [sec]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0
www.fairchildsemi.com