FQPF8N60CT Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω

 !    (continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
IV_DG=^S
=0V
250 µ
A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
10²
Operation in This Area
is Limited by R _DS(on)
10 µs
10¹
100 µs
1 ms
10 ms
100 ms
10⁰
DC
10^-1
10^-2
10⁰
※ Notes :
1. T_C = 25 ^oC
2.
3.
ST^Jin=gl1e5P0u^olCse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
IV_DG=^S
=
4
10
A
V
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0.5
10⁰
0 .2
0 .1
1 0 ^-1
0 .05
0.0 2
0.0 1
1 0 ^-2
1 0 ^-5
※ N otes :
1.
2.
3.
DZ ^θu^Jt^Cy(
T _JM -
t)
F
T
= 2.6
actor,
C ^{= P}D
℃ /W
M^{D*=Zt 1}θ^/
Max
t₂
J
C
(
t
)
.
s ingle p ulse
P_DM
t₁
t₂
1 0 ^-4
t₁ ,
S
q
u¹a⁰
-3
r
e
W
a
v
e
1_P0
-2
u
l
s
e
D
u r ¹a⁰t^-i¹ o n
[ s e c ]^{1 0 0}
10¹
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
4
FQPF8N60C Rev. C0
www.fairchildsemi.com