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FQPF7P06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET
◁
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -3.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
101
D = 0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u lse
※ N otes :
1. Zθ
(t) = 6.2 ℃ /W
JC
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
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