FQPF50N06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V =0V
2.
GS
I_D =
250
μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. V_GS = 10 V
2. I = 25 A
D
0.0
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
40
30
20
10
0
25
50
75
100
125
150
175
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
1 0 ^-1
D =0 .5
0 .2
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1. Z_θ
(t)
JC
=
3 .2 2
℃ /W
M ax.
2 . D u t y F a c t o r , D = t /t
12
3 . T _{J M} - T _C = P _{D M} * Z _{θ J C}( t )
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001