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| FQPF4N90 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1. V =0V
2.
I
GS
=
250
μ
A
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
101
1 ms 100 µs
10 ms
100
100 ms
DC
10-1
10-2
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. V = 10 V
GS
2. ID = 2.1 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
1 0 -5
s in g le p u ls e
â» N ote s :
1 . Z θ JC(t) = 2 .6 6 â /W M a x .
2. D u ty F actor, D =t /t
12
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, October 2001
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